Temperature dependence of the growth of super-grain polycrystalline silicon by metal induced crystallization

被引：15

作者：

Choi, JH

Kim, DY

Park, SJ

Choo, BK

Jang, J ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

[2] Kyung Hee Univ, TFT, LCD Natl Lab, Seoul 130701, South Korea

来源：

THIN SOLID FILMS | 2003年 / 427卷 / 1-2期

关键词：

nickel; annealing; crystallization;

D O I：

10.1016/S0040-6090(02)01150-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the growth of super-grain polycrystalline silicon by silicide mediated crystallization of amorphous silicon (a-Si) using a pulsed rapid thermal annealing (RTA). The Ni particles of 4.6 X 10(12) cm(-2) were scattered onto the a-Si and then heated at various temperatures in the RTA system. The grain size was found to decrease from 41 to 26 mum with increasing crystallization temperature from 650 to 750 degreesC. The formation of nuclei and the grain growth rate from the nuclei have been investigated as a function of temperature. The density of NiSi2 nuclei increases from 9.47 X 10(4) to 1.89 x 10(5) cm(-2) as crystallization temperature increases from 650 to 750 degreesC. The grain growth velocity from the nuclei was found to be 8.6 X 10(-5) cm s(-1) at 750 degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：289 / 293

页数：5

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