GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect

被引:30
作者
Ushigome, R [1 ]
Fujita, M [1 ]
Sakai, A [1 ]
Baba, T [1 ]
Kubun, YK [1 ]
机构
[1] Yokohama Natl Univ, Dept Elect & Comp Engn, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 11A期
关键词
GaInAsP; semiconductor laser; microcavity; microdisk; FDTD; behzo-cyclobutene; athermal;
D O I
10.1143/JJAP.41.6364
中图分类号
O59 [应用物理学];
学科分类号
摘要
We fabricated a GaInAsP microdisk laser using a benzocyclobutene (BCB) polymer cladding, which decreased. the fragility and the thermal resistance of the conventional air cladding device and simplified the current injection using the metal pad electrode. The threshold current for a 7-mum-diameter device was 0.4 mA at room temperature, which was almost the same as that for the air cladding device. The red shift of the resonant spectrum against the continuous wave current was reduced by 54% in the BCB cladding device. Nearly 90% of this reduction is attributed to the reduction in thermal. resistance. The remaining 10% is due to the reduction in temperature dependence (athermal effect) by the BCB cladding which has a negative temperature dependence of the refractive index. An analysis shows that-the microdisk laser with a polymer cladding can function as an athermal laser when the disk thickness is reduced to 50-80 nm.
引用
收藏
页码:6364 / 6369
页数:6
相关论文
共 21 条
[1]  
[Anonymous], 1991, SEMICONDUCTORS+, DOI DOI 10.1007/978-3-642-45681-7
[2]   Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2-10 mu m [J].
Baba, T ;
Fujita, M ;
Sakai, A ;
Kihara, M ;
Watanabe, R .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (07) :878-880
[3]   Photonic crystals and microdisk cavities based on GaInAsP-InP system [J].
Baba, T .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :808-830
[4]   TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX IN SEMICONDUCTORS [J].
BERTOLOTTI, M ;
BOGDANOV, V ;
FERRARI, A ;
JASCOW, A ;
NAZOROVA, N ;
PIKHTIN, A ;
SCHIRONE, L .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1990, 7 (06) :918-922
[5]   REFRACTIVE-INDEX OF IN1-XGAXASYP1-Y LAYERS AND INP IN THE TRANSPARENT WAVELENGTH REGION [J].
BROBERG, B ;
LINDGREN, S .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (09) :3376-3381
[6]   Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: Design, fabrication, lasing characteristics, and spontaneous emission factor [J].
Fujita, M ;
Sakai, A ;
Baba, T .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) :673-681
[7]   Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40μA [J].
Fujita, M ;
Ushigome, R ;
Baba, T .
ELECTRONICS LETTERS, 2000, 36 (09) :790-791
[8]   Low-threshold continuons-wave lasing in photopumped GaInAsP microdisk lasers [J].
Fujita, M ;
Teshima, K ;
Baba, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (8B) :L875-L877
[9]   GaInAsP microcylinder (microdisk) injection laser with AlInAs(Ox) claddings [J].
Fujita, M ;
Ushigome, R ;
Baba, T ;
Matsutani, A ;
Koyama, F ;
Iga, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (9A) :5338-5339
[10]   Large spontaneous emission factor of 0.1 in a microdisk injection laser [J].
Fujita, M ;
Ushigome, R ;
Baba, T .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (05) :403-405