Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices

被引：6

作者：

Hbib, H

Bonnaud, O

Gauneau, M

Hamedi, L

Marchand, R

Quemerais, A

机构：

[1] Univ Rennes 1, Grp Microelect & Visualisat, UPRESA 6076, F-35042 Rennes, France

[2] France Telecom, CNET, Ctr Lannion B, Dept PCO, F-22307 Lannion, France

[3] Fac Sci & Tech Sauss, Dept Phys, Fes, Morocco

[4] Univ Rennes 1, URA CNRS 1496, Lab Verres & Ceram, F-35042 Rennes, France

[5] Univ Rennes 1, URA CNRS 1202, Lab Spect Solide & Elect Quant, F-35042 Rennes, France

来源：

THIN SOLID FILMS | 1997年 / 310卷 / 1-2期

关键词：

D O I：

10.1016/S0040-6090(97)00324-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new gate-insulating film consisting of phosphorus oxinitride (PON) was formed on an (n)InP surface by vapour transport technique. The substrate temperature was in the range of 280-350 degrees C. The deposited films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The interfacial properties of phosphorus oxinitride/(n)InP metal-insulator-semiconductor were investigated. The minimum value of the interface states density distribution (D-it), evaluated from high-frequency capacitance-voltage (C-V) measurement was 1.2 X 10(11) eV(-1) cm(-2) at about 0.48 eV below the conduction band edge of InP. (C) 1997 Elsevier Science S.A.

引用

页码：1 / 7

页数：7

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[1] PHOTOLUMINESCENCE INTENSITY STUDY OF N-INP MIS STRUCTURES REALIZED WITH A NATIVE OXIDE INSULATOR FILM [J].