ZnSe epitaxy an a GaAs(110) surface

被引：9

作者：

Miwa, S

Kuo, LH

Kimura, K

Ohtake, A

Yasuda, T

Jin, CG

Yao, T

机构：

[1] NATL INST ADV INTERDISCIPLINARY RES,JOINT RES CTR ATOM TECHNOL,TSUKUBA,IBARAKI 305,JAPAN

[2] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 09期

关键词：

D O I：

10.1063/1.119622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSe molecular beam epitaxial growth on GaAs(110) substrates has been studied using reflection high-energy electron diffraction (RHEED), atomic force microscopy, and transmission electron microscopy. An atomically Rat and low defect homoepitaxial buffer GaAs(110) was grown with high V/III ratio (greater than or equal to 150) and at low growth temperature (similar to 430 degrees C). At the beginning of ZnSe growth on a GaAs(110) buffer epitaxial layer, RHEED oscillation was observed and no facet was seen on a pseudomorphic ZnSe(110) surface. Low defect ZnSe films (defect density less than or equal to 10(5) cm(-2)) were also obtained without the Zn preexposure process necessary for low defect ZnSe(001) growth. (C) 1997 American Institute of Physics.

引用

页码：1192 / 1194

页数：3

共 14 条

[1] CHARACTERIZATION OF SURFACE FACETING ON (110)GAAS/GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].