Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors

被引：123

作者：

Nili, Hussein ^{[1
]}

Walia, Sumeet ^{[1
]}

Balendhran, Sivacarendran ^{[1
]}

Strukov, Dmitri B. ^{[2
]}

Bhaskaran, Madhu ^{[1
]}

Sriram, Sharath ^{[1
]}

机构：

[1] RMIT Univ, Sch Elect & Comp Engn, Funct Mat & Microsyst Res Grp, Melbourne, Vic, Australia

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

ADVANCED FUNCTIONAL MATERIALS | 2014年 / 24卷 / 43期

基金：

澳大利亚研究理事会;

关键词：

THIN-FILMS; SRTIO3; DEVICES; FERROELECTRICITY; TRANSPORT; MECHANISM; MODEL;

D O I：

10.1002/adfm.201401278

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Memristive devices are the precursors to high density nanoscale memories and the building blocks for neuromorphic computing. In this work, a unique room temperature synthesized perovskite oxide (amorphous SrTiO3 : alpha-STO) thin film platform with engineered oxygen deficiencies is shown to realize high performance and scalable metal-oxide-metal (MIM) memristive arrays demonstrating excellent uniformity of the key resistive switching parameters. alpha-STO memristors exhibit nonvolatile bipolar resistive switching with significantly high (10(3)-10(4)) switching ratios, good endurance (>10(6) I-V sweep cycles), and retention with less than 1% change in resistance over repeated 10(5) s long READ cycles. Nano-contact studies utilizing in situ electrical nanoindentation technique reveal nanoionics driven switching processes that rely on isolatedly controllable nano-switches uniformly distributed over the device area. Furthermore, in situ electrical nanoindentation studies on ultrathin alpha-STO/metal stacks highlight the impact of mechanical stress on the modulation of non-linear ionic transport mechanisms in perovskite oxides while confirming the ultimate scalability of these devices. These results highlight the promise of amorphous perovskite memristors for high performance CMOS/CMOL compatible memristive systems.

引用

页码：6741 / 6750

页数：10

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