carrier mobility;
flexible electronics;
gas sensors;
organic field effect transistors;
oxygen;
HIGH-PERFORMANCE;
D O I:
10.1063/1.3360223
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Flexible picene thin film field-effect transistors (FETs) have been fabricated with parylene gate dielectric on polyethylene terephthalate substrates. The picene thin film FETs show p-channel output/transfer characteristics and the field-effect mobility mu reaches similar to 1 cm(2) V(-1) s(-1) in vacuum. The FET shows a clear O(2) gas sensing effect and negligible hysteresis in the transfer curves, indicating a possible application of the transistor as O(2) selective gas sensor. Furthermore, it has been found that the parylene gate dielectric can eliminate a reduction in on-state drain current caused by continuous bias-voltage application which is observed if a SiO(2) gate dielectric is used.