Flexible picene thin film field-effect transistors with parylene gate dielectric and their physical properties

被引:39
作者
Kawasaki, Naoko [1 ]
Kalb, Wolfgang L. [2 ]
Mathis, Thomas [2 ]
Kaji, Yumiko [1 ]
Mitsuhashi, Ryoji [3 ]
Okamoto, Hideki [3 ]
Sugawara, Yasuyuki [4 ]
Fujiwara, Akihiko [5 ]
Kubozono, Yoshihiro [1 ]
Batlogg, Bertram [2 ]
机构
[1] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
[2] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
[3] Okayama Univ, Div Chem & Biochem, Okayama 7008530, Japan
[4] Kuramoto Seisakusho Co Ltd, Kurihara 9895508, Japan
[5] Japan Adv Inst Sci & Technol, Kanazawa, Ishikawa 9230062, Japan
关键词
carrier mobility; flexible electronics; gas sensors; organic field effect transistors; oxygen; HIGH-PERFORMANCE;
D O I
10.1063/1.3360223
中图分类号
O59 [应用物理学];
学科分类号
摘要
Flexible picene thin film field-effect transistors (FETs) have been fabricated with parylene gate dielectric on polyethylene terephthalate substrates. The picene thin film FETs show p-channel output/transfer characteristics and the field-effect mobility mu reaches similar to 1 cm(2) V(-1) s(-1) in vacuum. The FET shows a clear O(2) gas sensing effect and negligible hysteresis in the transfer curves, indicating a possible application of the transistor as O(2) selective gas sensor. Furthermore, it has been found that the parylene gate dielectric can eliminate a reduction in on-state drain current caused by continuous bias-voltage application which is observed if a SiO(2) gate dielectric is used.
引用
收藏
页数:3
相关论文
共 15 条
[1]  
Colinge CA Colinge J., 2002, PHYS SEMICONDUCTOR D
[2]   Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors [J].
Ebata, Hideaki ;
Izawa, Takafumi ;
Miyazaki, Eigo ;
Takimiya, Kazuo ;
Ikeda, Masaaki ;
Kuwabara, Hirokazu ;
Yui, Tatsuto .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (51) :15732-+
[3]   High-mobility C60 field-effect molecular-wetting controlled transistors fabricated on substrates [J].
Itaka, Kenji ;
Yamashiro, Mitsugu ;
Yamaguchi, Jun ;
Haemori, Masamitsu ;
Yaginuma, Seiichiro ;
Matsumoto, Yuji ;
Kondo, Michio ;
Koinuma, Hideomi .
ADVANCED MATERIALS, 2006, 18 (13) :1713-+
[4]   Low voltage operation in picene thin film field-effect transistor and its physical characteristics [J].
Kaji, Yumiko ;
Kawasaki, Naoko ;
Lee, Xuesong ;
Okamoto, Hideki ;
Sugawara, Yasuyuki ;
Oikawa, Shohei ;
Ito, Akio ;
Okazaki, Hiroyuki ;
Yokoya, Takayoshi ;
Fujiwara, Akihiko ;
Kubozono, Yoshihiro .
APPLIED PHYSICS LETTERS, 2009, 95 (18)
[5]   High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure [J].
Kaji, Yumiko ;
Mitsuhashi, Ryoji ;
Lee, Xuesong ;
Okamoto, Hideki ;
Kambe, Takashi ;
Ikeda, Naoshi ;
Fujiwara, Akihiko ;
Yamaji, Minoru ;
Omote, Kenji ;
Kubozono, Yoshihiro .
ORGANIC ELECTRONICS, 2009, 10 (03) :432-436
[6]   Organic small molecule field-effect transistors with Cytop™ gate dielectric:: Eliminating gate bias stress effects [J].
Kalb, W. L. ;
Mathis, T. ;
Haas, S. ;
Stassen, A. F. ;
Batlogg, B. .
APPLIED PHYSICS LETTERS, 2007, 90 (09)
[7]   Trap states and transport characteristics in picene thin film field-effect transistor [J].
Kawasaki, Naoko ;
Kubozono, Yoshihiro ;
Okamoto, Hideki ;
Fujiwara, Akihiko ;
Yamaji, Minoru .
APPLIED PHYSICS LETTERS, 2009, 94 (04)
[8]   High-performance C60 thin-film field-effect transistors with parylene gate insulator [J].
Kubozono, Yoshihiro ;
Haas, Simon ;
Kalb, Wolfgang L. ;
Joris, Pierre ;
Meng, Fabian ;
Fujiwara, Akihiko ;
Batlogg, Bertram .
APPLIED PHYSICS LETTERS, 2008, 93 (03)
[9]  
LEE X, UNPUB
[10]   Stacked pentacene layer organic thin-film transistors with improved characteristics [J].
Lin, YY ;
Gundlach, DJ ;
Nelson, SF ;
Jackson, TN .
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (12) :606-608