Diffusion and reaction kinetics of fast-ion-induced point defects studied by deep level transient spectroscopy

The formation of point defects in high purity n-type silicon following MeV ion implantation is investigated. Low doses are used, typically between 10(7) and 10(10) cm(-2) for high and low mass ions respectively, which makes it possible to study the defects with deep level transient spectroscopy. In particular it is shown that the vacancy-oxygen center (VO) and the divacancy (V-2) are formed under differing conditions. The VO formation is enhanced by low mass ions were less distortion of the lattice and lower local concentration of free vacancies increase the vacancy diffusion. V-2, on the other hand, is produced in regions of high vacancy concentration, which is typical for heavy ion implantation.