Shape and stability of quantum dots

被引：129

作者：

Pehlke, E ^{[1
]}

Moll, N ^{[1
]}

Kley, A ^{[1
]}

Scheffler, M ^{[1
]}

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1997年 / 65卷 / 06期

关键词：

D O I：

10.1007/s003390050619

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of dislocation-free three-dimensional islands by heteroepitaxial growth of lattice mismatched materials is utilized to produce partially ordered arrays of quantum dots. The equilibrium shape of these islands results from the competition between surface and elastic energies. We have studied the system InAs/GaAs(001) in detail. InAs surface energies have been computed ab initio for several orientations, and the elastic energy of the islands has been calculated within a continuum theory. The resulting equilibrium islands are hills bounded by {110}, {111}, and {(111) over bar} facets and a (001) surface on top. We compare to experiment and discuss the influence of growth kinetics on the shape.

引用

页码：525 / 534

页数：10

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