1.5μm GaInNAs(Sb) lasers grown on GaAs by MBE

被引：20

作者：

Bank, S

Ha, W

Gambin, V

Wistey, M

Yuen, H

Goddard, L

Kim, S

Harris, JS

机构：

[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

[2] Agilent Technol, San Jose, CA 95131 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

photoluminescence; molecular beam epitaxy; quantum wells; nitride-arsenides; semiconducting quaternary alloys; laser diodes;

D O I：

10.1016/S0022-0248(02)02446-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We demonstrate the first 1.5 mum GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 mum. A 1.465 mum laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930 A/cm(2) per quantum well, a differential quantum efficiency of 0.30 W/A (both facets), an external quantum efficiency of 35%, and peak power above 70 mW. Additionally, the use of antimony allows for a decrease in the bandgap out to 1.6 mum, while still preserving luminescence efficiency as compared to 1.3 mum GaInNAs material. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：367 / 371

页数：5

共 13 条

[1]

BOEHM G, 2002, MBE C

[2] GaInAsN/GaAs laser diodes operating at 1.52μm [J].