Formation trends in quantum dot growth using metalorganic chemical vapor deposition

被引：73

作者：

El-Emawy, AA

Birudavolu, S

Wong, PS

Jiang, YB

Xu, H

Huang, S

Huffaker, DL

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] Univ New Mexico, Dept Earth & Planetary Sci, Albuquerque, NM 87131 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 06期

关键词：

D O I：

10.1063/1.1543647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discuss the results of a growth matrix designed to produce high quantum dot (QD) density, defect-free QD ensembles, which emit at 1.3 mum using metalorganic chemical vapor deposition (MOCVD). In our study, we balance the nucleation rate and adatom surface migration to achieve high surface densities (1x10(11) dots/cm(2)) and avoid QD coalescence or defects that commonly characterize MOCVD-grown QD ensembles designed for longer wavelength emission. Room-temperature photoluminescence (PL) spectra from corresponding surface QDs depend on QD size and density and show an emission wavelength up to 1600 nm. Ground-state PL from capped QDs is measured at 1.38 mum with a 40 meV linewidth. We demonstrate the ground-state 1.3 mum electroluminescence from a QD light-emitting diode structure grown on n-type GaAs. (C) 2003 American Institute of Physics.

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页码：3529 / 3534

页数：6

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