共 10 条
Air-stable and high-mobility organic thin-film transistors of poly(2,5-bis(2-thienyl)-3,6-dihexadecyltheino[3,2-b]thiophene) on low-surface-energy self-assembled monolayers
被引:7
作者:

Nakayama, K.
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机构:
Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan

Uno, M.
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机构:
Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan

Nishikawa, T.
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机构:
Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan

Nakazawa, Y.
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Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan

Takeya, J.
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机构:
Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan
Osaka Univ, ISIR, Osaka 5670047, Japan Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan
机构:
[1] Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan
[2] Osaka Univ, ISIR, Osaka 5670047, Japan
关键词:
Organic semiconductors;
Field effect transistors;
Polymer organic transistor;
Organic thin-film transistor;
FIELD-EFFECT TRANSISTORS;
D O I:
10.1016/j.orgel.2010.07.004
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Air-stable and high-mobility polymer-based organic thin-film transistors are developed by employing low-surface-energy self-assembled monolayers and prolonged post-annealing. Carrier mobility in spin-coated thin films of a high-ionic-potential polymer semiconductor poly(2,5-bis(2-thienyl)-3,6-dihexadecyltheino[3,2-b]thiophene) reaches (0.08-0.17 cm(2)/V s with decyltriethoxysilane monolayers and 0.4-0.8 cm(2)/V s with (heptadecafluoro-1,1,2,2-tetrahydrodecyl)triethoxysilane monolayers. The values become higher with longer annealing above the glass-transition temperature. The mobility, threshold voltage and on-off ratio are stable in humid air during the whole period of the experiment for more than 2 weeks. The high-performance and the air-stability demonstrated in the polymer thin-film transistors have enhanced their applicability in large-area, low-cost and flexible electronic devices. (C) 2010 Elsevier B.V. All rights reserved.
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页码:1620 / 1623
页数:4
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