Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects

被引：28

作者：

Bufler, FM ^{[1
]}

Fichtner, W ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Inst Integrierte Syst, CH-8092 Zurich, Switzerland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 02期

关键词：

ballistic transport; Monte Carlo methods; MOSFET scaling; strained silicon; velocity overshoot;

D O I：

10.1109/TED.2002.808552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of the strain-induced on-current improvement in n-MOSFETs on scaling and the crystallographic orientation of the channel is investigated by self-consistent full-band Monte Carlo simulation. For a channel orientation along the <110> direction, the enhancement decreases weakly from almost 40% to 30% as the effective gate length is reduced from 75 to 25 run. For the <100> direction, the improvement is about 10% higher. The anisotropy of the drain current, which vanishes for small drain voltages, is attributed to the different band curvatures above 100 meV. This feature appears to be crucial for quasi-ballistic transport of the electrons in the high longitudinal field as they enter the source-side of the channel.

引用

页码：278 / 284

页数：7

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