Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

被引：138

作者：

Sung, Sang-Yun ^{[1
]}

Choi, Jun Hyuk ^{[1
]}

Han, Un Bin ^{[1
]}

Lee, Ki Chang ^{[1
]}

Lee, Joon-Hyung ^{[1
]}

Kim, Jeong-Joo ^{[1
]}

Lim, Wantae ^{[2
]}

Pearton, S. J. ^{[2
]}

Norton, D. P. ^{[2
]}

Heo, Young-Woo ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Mat Sci & Engn, Taegu 702701, South Korea

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 10期

关键词：

ROOM-TEMPERATURE; TFTS;

D O I：

10.1063/1.3357431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the transfer characteristics and the gate-bias stability of amorphous indium-gallium-zinc oxide thin-film transistors when the channel layer was exposed to hydrogen, oxygen, air, or vacuum at room temperature during measurements. The threshold voltage and the drain current were changed by the ambient atmospheres. The threshold voltage shift (Delta V-th) under gate-bias stress was faster in hydrogen than in oxygen and vacuum. It is suggested that hydrogen exposure degrades the gate-bias stress stability due to surface accumulation layer creation. The characteristic trapping times, tau, in H-2, O-2, air, and vacuum were 5 x 10(3), 1.5 x 10(4), 2 x 10(4), and 6.3 x 10(4) s, respectively. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3357431]

引用

页数：3

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