(001) Surfaces of GaP and InP: structural motifs, electronic states and optical signatures

被引:21
作者
Schmidt, WG
Bernholc, J
Bechstedt, F
机构
[1] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany
[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
基金
美国国家科学基金会;
关键词
gallium phosphide; indium phosphide; (001) surfaces; reflection spectroscopy; density functional calculations; excitation spectra calculations;
D O I
10.1016/S0169-4332(00)00406-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present ab initio calculations on the energetics and geometry, as well as electronic and optical properties of InP and GaP(001) surfaces. Cation-rich conditions lead to the formation of asymmetric cation-anion dimers on top of a (2 x 4) reconstructed cation-terminated surface. Anion-rich surfaces form c(4 x 4) reconstructions. Based on the DFT-LDA electronic structure, we compute the reflectance anisotropy of the energetically favoured (2 x 4) reconstructions. Strong anisotropies in the low-energy region arise from transitions between a-like cation-cation bonding states and empty dangling bonds. Transitions involving P dimer states and surface modified bulk wave functions contribute at higher energies. The application of GW corrections leads to non-uniform shifts of characteristic peaks and changes the line shape, considerably improving the agreement with experiment. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:179 / 184
页数:6
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