Reliable extraction of MOS interface traps from low-frequency CV measurements

被引：24

作者：

Pacelli, A ^{[1
]}

Lacaita, AL ^{[1
]}

Villa, S ^{[1
]}

Perron, L ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 05期

关键词：

capacitance measurements; MOS interface traps; quantization effects; surface potential; trap energy;

D O I：

10.1109/55.669731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved version of the low-frequency capacitance-voltage (LFCV) method for MOS interface trap extraction is presented. The rising edge of the gate-channel capacitance is used as a reliable reference for determining the surface potential, allowing a more accurate calculation of the trap energy. Also, a self-consistent Schrodinger-Poisson solver is employed to obtain a theoretical CV curve, accounting for quantization effects. It is shown that the improved method supplies better results than the conventional LFCV and high-low frequency methods.

引用

页码：148 / 150

页数：3

共 11 条

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].

BERGLUND, CN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+

[2] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J].

CASTAGNE, R ;

VAPAILLE, A .

SURFACE SCIENCE, 1971, 28 (01) :157-+

[3] MEASUREMENT OF LOW DENSITIES OF SURFACE STATES AT SI-SIO2-INTERFACE [J].

DECLERCK, G ;

VANOVERS.R ;

BROUX, G .

SOLID-STATE ELECTRONICS, 1973, 16 (12) :1451-1460

[4] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J].

GROESENEKEN, G ;

MAES, HE ;

BELTRAN, N ;

DEKEERSMAECKER, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :42-53

[5] INVESTIGATION OF MOST CHANNEL CONDUCTANCE IN WEAK INVERSION [J].

KOOMEN, J .

SOLID-STATE ELECTRONICS, 1973, 16 (07) :801-810

[6] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].

KUHN, M .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+

[7]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[8] Self-consistent solution of the Schrodinger equation in semiconductor devices by implicit iteration [J].

Pacelli, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (07) :1169-1171

[9] Characterization of polysilicon-gate depletion in MOS structures [J].

Ricco, B ;

Versari, R ;

Esseni, D .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (03) :103-105

[10] DETERMINATION OF INTERFACE TRAP CAPTURE CROSS-SECTIONS USING 3-LEVEL CHARGE PUMPING [J].

SAKS, NS ;

ANCONA, MG .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (08) :339-341

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