Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

被引:194
作者
Xu, Yong [1 ]
Minari, Takeo [2 ,3 ]
Tsukagoshi, Kazuhito [2 ,4 ]
Chroboczek, J. A. [1 ]
Ghibaudo, Gerard [1 ]
机构
[1] MINATEC, IMEP LAHC, INP Grenoble, F-38016 Grenoble, France
[2] NIMS, MANA, Tsukuba, Ibaraki 3050044, Japan
[3] RIKEN, Wako, Saitama 3510198, Japan
[4] JST, CREST, Kawaguchi, Saitama 3320012, Japan
关键词
carrier mobility; contact resistance; organic compounds; organic field effect transistors; THIN-FILM TRANSISTORS; CONTACT RESISTANCE; ORGANIC TRANSISTORS; THRESHOLD VOLTAGE; GATE VOLTAGE; EXTRACTION; DEVICES; SEMICONDUCTORS; ELECTRODES; PARAMETERS;
D O I
10.1063/1.3432716
中图分类号
O59 [应用物理学];
学科分类号
摘要
Organic field-effect transistors (OFETs) suffer from limitations such as low mobility of charge carriers and high access resistance. Direct and accurate evaluation of these quantities becomes crucial for understanding the OFETs properties. We introduce the Y function method (YFM) to pentacene OFETs. This method allows us to evaluate the low-field mobility without the access or contact resistance influence. The low-field mobility is shown to be more appropriate than the currently applied field-effect mobility for the OFETs' performance evaluation. Its unique advantage is to directly suppress the contact resistance influence in individual transistors, although such contact resistance is a constant as compared to the widely accepted variable one with respect to the gate voltage. After a comparison in detail with the transmission-line method, the YFM proved to be a fast and precise alternative method for the contact resistance evaluation. At the same time, how the contact resistance affects the effective mobility and the field-effect mobility in organic transistors is also addressed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3432716]
引用
收藏
页数:7
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