Vertical-cavity surface-emitting lasers with spatially adjustable DBR reflectivity to enable free-space photonic repeaters

被引：1

作者：

Bond, AE ^{[1
]}

Dapkus, PD ^{[1
]}

机构：

[1] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 05期

关键词：

distributed Bragg reflector lasers; optical data processing; semiconductor lasers; surface emitting lasers;

D O I：

10.1109/68.669218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have created bidirectional high-performance top- and bottom-emitting vertical-cavity surface-emitting lasers (VC-SEL's) from a single epitaxial wafer. Using a spatially selective oxidation of AlAs layers in hybrid distributed Bragg reflectors (DBR's) of a VCSEL structure, devices processed for top emission had threshold currents of 100-110 mu A with slope efficiencies of 18%-20%. Devises from the same wafer processed for bottom substrate emission had thresholds of 110-120 mu A and slope efficiencies of 17% and 18%. This technology will greatly simplify the use of VCSEL's in large three-dimensional (3-D) parallel interconnects, photonic repeaters, and smart pixels.

引用

页码：636 / 638

页数：3

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