Quantitative theory of scattering in antimonide-based heterostructures with imperfect interfaces

被引：12

作者：

Shaw, MJ ^{[1
]}

Corbin, EA ^{[1
]}

Kitchin, MR ^{[1
]}

Hagon, JP ^{[1
]}

Jaros, M ^{[1
]}

机构：

[1] Newcastle Univ, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 04期

关键词：

D O I：

10.1116/1.1306330

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report quantitative calculations of carrier lifetimes in imperfect GaxIn1-xSb/InAs superlattice structures. A microscopic description of imperfections including substitutional anions and interface islands is obtained through a novel strain-dependent empirical pseudopotential calculation. The T matric. of scattering theory is used to take our calculations of scattering lifetimes beyond the Born approximation. including multiple scattering events. Carrier lifetimes are related to the microscopic nature of the defects, their proximity to the interfaces, and the size and shape of interface islands. Anomalous effects due to lattice relaxation are seen to alter hole lifetimes, and their dependence upon position. For isolated isovalent anion defects we predict electron and hole lifetimes as low as 0.2 and 0.8 mu s, respectively, for typical defect concentrations. (C) 2000 American Vacuum Society. [S0734-2101(00)07304-8].

引用

页码：2088 / 2095

页数：8

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