Room temperature deposition of ZnSe thin films by successive ionic layer adsorption and reaction (SILAR) method

被引：70

作者：

Kale, RB

Lokhande, CD ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

[2] Rajaram Coll, Dept Phys, Kolhapur 416004, Maharashtra, India

来源：

MATERIALS RESEARCH BULLETIN | 2004年 / 39卷 / 12期

关键词：

X-ray diffraction;

D O I：

10.1016/j.materresbull.2004.06.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The zinc selenide (ZnSe) thin films are deposited onto glass substrate using relatively simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method. The films are deposited using zinc acetate sodium selenosulphate precursors. The concentration, pH, immersion and rinsing times and number of immersion cycles have been optimized to obtain good quality ZnSe thin films. The X-ray diffraction (XRD) study and scanning electron microscopy (SEM) studies reveals nanocrystalline nature alongwith some amorphous phase present in ZnSe thin films. Energy dispersive X-ray (EDAX) analysis shows that the films are Se deficient. From optical absorption data, the optical band gap 'E-g' for as-deposited thin film was found to be 2.8 eV and electrical resistivity in the order of 10(7) Omega cm. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：1829 / 1839

页数：11

共 29 条

[11] POLYCRYSTALLINE ZINC SELENIDE FILMS DEPOSITED BY A LOW-TEMPERATURE CLOSE-SPACED-VAPOR-TRANSPORT METHOD [J].