EFFECT OF AR LASER-ILLUMINATION UPON ZNTE GROWTH IN ATMOSPHERIC-PRESSURE MOVPE

被引:24
作者
NISHIO, M [1 ]
OGAWA, H [1 ]
YOSHIDA, A [1 ]
机构
[1] TOYOHASHI UNIV TECHNOL,DEPT ELECT & ELECTR ENGN,TOYOHASHI,AICHI 440,JAPAN
关键词
D O I
10.1016/0022-0248(91)90754-S
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
ZnTe growth has been investigated, using (100), (110) and (111) Zn and Te substrates, by Ar+-ion laser-assisted metal organic vapor phase epitaxy at atmospheric pressure. For the (100)-oriented substrate, the growth rate of the epitaxial layer is dramatically enhanced under illumination. The quantum yield for forming ZnTe molecules by photons is calculated to be as high as about 3%. From the relationship between the transport rate of source material and the growth rate, it has been concluded that both the diethyletelluride and the dimethylzinc which are used as source materials become decomposed by illumination. On the other hand, for other substrate orientations, the effect of illumination upon the growth rate has hardly been observed. Hence, source gas molecules are effectively decomposed on the (100) surface under illumination. Epitaxial layers of good quality can be obtained at low substrate temperature by using the (100) substrate.
引用
收藏
页码:284 / 288
页数:5
相关论文
共 10 条
[1]   PHOTOENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ZNSE FILMS USING DIETHYLZINC AND DIMETHYLSELENIDE [J].
ANDO, H ;
INUZUKA, H ;
KONAGAI, M ;
TAKAHASHI, K .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :802-805
[2]   CHARACTERISTICS OF LASER METALORGANIC VAPOR-PHASE EPITAXY IN GAAS [J].
AOYAGI, Y ;
KANAZAWA, M ;
DOI, A ;
IWAI, S ;
NAMBA, S .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3131-3135
[3]   LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS [J].
DONNELLY, VM ;
TU, CW ;
BEGGY, JC ;
MCCRARY, VR ;
LAMONT, MG ;
HARRIS, TD ;
BAIOCCHI, FA ;
FARROW, RC .
APPLIED PHYSICS LETTERS, 1988, 52 (13) :1065-1067
[4]   SURFACE PHOTOCHEMICAL-REACTIONS FOR ALKYL GROUP ELIMINATION FROM PRECURSORS IN OMVPE [J].
FUJITA, S ;
MARUO, S ;
ISHIO, H ;
MURAWALA, PA ;
FUJITA, S .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :644-648
[5]   LOW-PRESSURE MOCVD GROWTH OF ZNTE AND OBSERVATION OF GAS REACTION [J].
NISHIO, M ;
OGAWA, H ;
YOSHIDA, A .
VACUUM, 1990, 41 (1-3) :715-717
[6]  
NISHIO M, 1990, JPN J APPL PHYS, V29, P145
[7]   LOW-PRESSURE GROWTH OF ZNTE BY AR LASER-ASSISTED METALORGANIC VAPOR-PHASE EPITAXY [J].
OGAWA, H ;
NISHIO, M ;
IKEJIRI, M ;
TUBOI, H .
APPLIED PHYSICS LETTERS, 1991, 58 (21) :2384-2386
[8]  
OGAWA H, 1982, REP FS ENG SAGA U, V10, P109
[9]   MECHANISM OF GAAS SELECTIVE GROWTH IN AR+ LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY [J].
SUGIURA, H ;
YAMADA, T ;
IGA, R .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (01) :L1-L3
[10]   AR-ION LASER-ASSISTED MOVPE OF ZNSE USING DMZN AND DMSE AS REACTANTS [J].
YOSHIKAWA, A ;
OKAMOTO, T ;
FUJIMOTO, T ;
ONOUE, K ;
YAMAGA, S ;
KASAI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (02) :L225-L228