DX CENTERS IN III-V-COMPOUND AND ALLOY SEMICONDUCTORS AS STUDIED BY HYDROSTATIC-PRESSURE EXPERIMENTS

被引：26

作者：

FUJISAWA, T

YOSHINO, J

KUKIMOTO, H

机构：

[1] Tokyo Inst of Technology, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 1-2期

关键词：

17;

D O I：

10.1016/0022-0248(89)90204-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：243 / 248

页数：6

共 17 条

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[7]

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APPLIED PHYSICS LETTERS, 1988, 53 (13) :1195-1197

[9] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J].

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[10] EFFECT OF LOCAL ALLOY DISORDER ON EMISSION KINETICS OF DEEP DONORS (DX CENTERS) IN ALXGA1-XAS OF LOW AL CONTENT [J].

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