MODELING OF HEAT-FLOW IN MULTILAYER CW LASER-ANNEALED STRUCTURES

被引：11

作者：

WAECHTER, D

SCHVAN, P

THOMAS, RE

TARR, NG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.336802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3371 / 3374

页数：4

共 11 条

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HOLMEN, G .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (07) :2161-2163

[2] TEMPERATURE DISTRIBUTIONS PRODUCED IN A 2-LAYER STRUCTURE BY A SCANNING CW LASER OR ELECTRON-BEAM [J].

BURGENER, ML ;

REEDY, RE .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4357-4363

[3]

DOUGLAS J, 1961, ADV COMPUTERS, P13

[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

DELINE, VR ;

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[5]

GOLDSMITH A, 1961, HDB THERMOPHYSICAL P, V3

[6] PREHEATED CW LASER ANNEALED TRANSISTORS IN SILICON ON SAPPHIRE [J].

HOLMEN, G ;

PETERSTROM, S ;

ALESTIG, G .

APPLIED PHYSICS LETTERS, 1984, 45 (07) :741-743

[7]

Kokorowski S. A., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P139

[8]

Roth J. A., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P413

[9] LASER-INDUCED LATERAL EPITAXIAL-GROWTH OF SILICON OVER SILICON DIOXIDE WITH LOCALLY VARIED ENCAPSULATION [J].

SAKURAI, J ;

KAWAMURA, S ;

NAKANO, M ;

TAKAGI, M .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :64-67

[10] TIME-DEPENDENT HEAT-FLOW CALCULATION OF CW LASER-INDUCED MELTING OF SILICON [J].

SCHVAN, P ;

THOMAS, RE .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4738-4741

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