AL-BASED PRECIPITATE EVOLUTION DURING HIGH-TEMPERATURE ANNEALING OF AL IMPLANTED IN SI

被引:11
作者
GALVAGNO, G
SCANDURRA, A
RAINERI, V
SPINELLA, C
TORRISI, A
LAFERLA, A
SCIASCIA, V
RIMINI, E
机构
[1] CONSORZIO CATANIA RIC,I-95125 CATANIA,ITALY
[2] UNIV CATANIA,DIPARTIMENTO SCI CHIM,I-95125 CATANIA,ITALY
[3] CORIMME,I-95100 CATANIA,ITALY
关键词
D O I
10.1149/1.2220815
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Al-based precipitate evolution for 80 keV Al ions implanted in Si has been investigated. Precipitates are formed during high temperature annealings of 1 X 10(15)/cm2 implanted samples. They are located at two depths where Al concentration peaks are detected. Al atoms are gettered into the extended defects present in the crystal and/or precipitate when their concentration is higher than the solid solubility value at the annealing temperature. Increasing annealing time, precipitates dissolve out and only a small fraction of atoms diffuses into the sample, meanwhile the greater part evaporates from the sample. At 1 X 10(13)/cm2 dose the Al concentration is below the solid solubility limit. The secondary defects are not detected and the dopant profile does not display anomalous peaks. Moreover, all the implanted Al is electrically active and remains in the sample during the first instant of annealing. At higher annealing times it diffuses out of the sample reducing the residual dose.
引用
收藏
页码:2313 / 2318
页数:6
相关论文
共 9 条
[1]   AN EFFICIENT INTEGRATION TECHNIQUE FOR USE IN THE MULTILAYER ANALYSIS OF SPREADING RESISTANCE PROFILES [J].
BERKOWITZ, HL ;
LUX, RA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) :1137-1141
[2]   A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].
BIERSACK, JP ;
HAGGMARK, LG .
NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269
[3]   ELECTRICAL-ACTIVITY OF ALUMINUM IMPLANTED IN SILICON - AN INTERFACE PROBLEM IN HIGH-POWER DEVICES [J].
BRUESCH, P ;
HALDER, E ;
KLUGE, P ;
RHYNER, J ;
ROGGWILLER, P ;
STOCKMEIER, T ;
STUCKI, F ;
WIESMANN, HJ .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2226-2234
[4]   INCORPORATION OF ION-IMPLANTED ALUMINUM IN SILICON ANNEALED AT HIGH-TEMPERATURES [J].
CHANG, HR ;
LEWIS, N ;
SMITH, GA ;
HALL, EL ;
TEMPLE, VAK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) :252-257
[5]   THE USE OF ALUMINUM ION-IMPLANTATION FOR POWER SEMICONDUCTOR-DEVICES [J].
HALDER, E ;
ROGGWILLER, P ;
GOBRECHT, J .
PHYSICA SCRIPTA, 1989, 39 (03) :406-409
[6]   TRANSMISSION ELECTRON-MICROSCOPY OF ALUMINUM IMPLANTED AND ANNEALED (100) SI - DIRECT EVIDENCE OF ALUMINUM PRECIPITATE FORMATION [J].
SADANA, DK ;
NORCOTT, MH ;
WILSON, RG ;
DAHMEN, U .
APPLIED PHYSICS LETTERS, 1986, 49 (18) :1169-1171
[7]   AVOIDING PREAMORPHIZATION DAMAGE IN MEV HEAVY ION-IMPLANTED SILICON [J].
SCHREUTELKAMP, RJ ;
CUSTER, JS ;
LIEFTING, JR ;
SARIS, FW .
APPLIED PHYSICS LETTERS, 1991, 58 (24) :2827-2829
[8]  
Sze S. M., 1981, PHYSICS SEMICONDUCTO, P69