INCORPORATION OF ION-IMPLANTED ALUMINUM IN SILICON ANNEALED AT HIGH-TEMPERATURES

被引：13

作者：

CHANG, HR

LEWIS, N

SMITH, GA

HALL, EL

TEMPLE, VAK

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 01期

关键词：

D O I：

10.1149/1.2095568

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：252 / 257

页数：6

共 9 条

[1] OPEN-TUBE DIFFUSION [J].

CHANG, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :1987-1992

[2] ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI [J].

DIETRICH, HB ;

WEISENBERGER, WH ;

COMAS, J .

APPLIED PHYSICS LETTERS, 1976, 28 (04) :182-184

[3] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553

[4] CRYSTALLINE-TO-AMORPHOUS PHASE-TRANSFORMATION BY ION-BOMBARDMENT OF THE ALLOY FE75B25 [J].

JOHNSTON, WG ;

MOGROCAMPERO, A ;

WALTER, JL ;

BAKHRU, H .

MATERIALS SCIENCE AND ENGINEERING, 1982, 55 (01) :121-133

[5]

KAO YC, 1967, ELECTROCHEM TECHNOL, V5, P90

[6] DIFFUSION AND INCORPORATION OF ALUMINUM IN SILICON [J].

RAICHOUDHURY, P ;

SELIM, FA ;

TAKEI, WJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) :762-766

[7] TRANSMISSION ELECTRON-MICROSCOPY OF ALUMINUM IMPLANTED AND ANNEALED (100) SI - DIRECT EVIDENCE OF ALUMINUM PRECIPITATE FORMATION [J].

SADANA, DK ;

NORCOTT, MH ;

WILSON, RG ;

DAHMEN, U .

APPLIED PHYSICS LETTERS, 1986, 49 (18) :1169-1171

[8]

SZE SM, PHYSICS SEMICONDUCTO, P69

[9]

1971, JANAF THERMOCHEMICAL

← 1 →