CHARACTERIZATION OF DEPTH PROFILES AND REDISTRIBUTION DURING THERMAL-PROCESSING OF ALUMINUM IMPLANTED INTO SILICON

被引：9

作者：

WILSON, RG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.338145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：933 / 939

页数：7

共 15 条

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