STRUCTURE AND ELECTRONIC STATES IN A-SI-H

被引:10
作者
JOANNOPOULOS, JD [1 ]
ALLAN, DC [1 ]
机构
[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139
来源
FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 1981年 / 21卷
关键词
D O I
10.1007/BFb0108604
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:167 / 190
页数:24
相关论文
共 188 条
[1]   DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758
[2]   HOLE DRIFT MOBILITY IN AMORPHOUS SILICON [J].
ALLAN, D .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04) :381-392
[3]  
ALLAN DC, 1980, PHYS REV LETT, V44, P43, DOI 10.1103/PhysRevLett.44.43
[4]  
ALLAN DC, 1981, P INT C TET BONDED A
[5]   ASSESSMENT OF THE SUITABILITY OF RF SPUTTERED AMORPHOUS HYDROGENATED SI AS A POTENTIAL SOLAR-CELL MATERIAL [J].
ANDERSON, DA ;
MODDEL, G ;
PAUL, W .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (01) :141-152
[6]   PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712
[7]   THICKNESS AND TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].
AST, DG ;
BRODSKY, MH .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03) :273-285
[8]  
AST DG, 1979, I PHYS C SER, V43, P1159
[9]   PHOTO-LUMINESCENCE AND LIFETIME STUDIES ON PLASMA DISCHARGE A-SI [J].
AUSTIN, IG ;
NASHASHIBI, TS ;
SEARLE, TM ;
LECOMBER, PG ;
SPEAR, WE .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :373-391
[10]   DETERMINATION OF STATES DISTRIBUTION IN HYDROGENATED AMORPHOUS-SILICON USING MIS TUNNEL-JUNCTIONS [J].
BALBERG, I .
PHYSICAL REVIEW B, 1980, 22 (08) :3853-3865