CHROMIUM THIN-FILM AS A BARRIER TO INTERACTION OF PD2SI WITH AL

被引：25

作者：

OLOWOLAFE, JO ^{[1
]}

NICOLET, MA ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,DEPT ELECT ENGN,PASADENA,CA 91125

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 05期

关键词：

D O I：

10.1016/0038-1101(77)90132-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：413 / 415

页数：3

共 15 条

[1]

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[8] EVALUATION OF GLANCING ANGLE X-RAY-DIFFRACTION AND MEV HE-4 BACKSCATTERING ANALYSES OF SILICIDE FORMATION [J].

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[9] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J].

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[10] TI AND V LAYERS RETARD INTERACTION BETWEEN AL FILMS AND POLYCRYSTALLINE SI [J].

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