REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY ON ADATOM DESORPTION FROM ZNSE SURFACE UNDER ELECTRON-BEAM IRRADIATION AND LIGHT IRRADIATION

被引：7

作者：

MATSUMURA, N

SENGA, K

KAKUTA, J

SARAIE, J

机构：

[1] Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Kyoto

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90730-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Effects of electron-beam and light irradiation on the desorption and adsorption processes of Zn and Se adatoms on ZnSe(100) surfaces were studied using the intensity variation of the specular spot of RHEED. The desorption rate constants of physisorbed and chemisorbed atoms were obtained and discussed.

引用

页码：129 / 133

页数：5

共 10 条

[1] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION ELECTRON-STIMULATED DESORPTION FROM ZNSE(100)(2X1)-SE SURFACES [J].

FARRELL, HH ;

DEMIGUEL, JL ;

TAMARGO, MC .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (10) :4084-4086

[2] LOW-TEMPERATURE GROWTH OF ZNSE BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

FUKADA, T ;

MATSUMURA, N ;

FUKUSHIMA, Y ;

SARAIE, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (09) :L1585-L1587

[3] MBE GROWTH OF HIGH-QUALITY LATTICE-MATCHED ZNSXSE1-X ON GAAS SUBSTRATES [J].

MATSUMURA, N ;

TSUBOKURA, M ;

SARAIE, J ;

YODOGAWA, Y .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :311-317

[4] LASER IRRADIATION DURING MBE GROWTH OF ZNSXSE1-X - A NEW GROWTH PARAMETER [J].

MATSUMURA, N ;

FUKADA, T ;

SARAIE, J .

JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) :61-66

[5] PHOTO-ASSISTED MBE GROWTH OF ZNSE ON GAAS SUBSTRATES [J].

MATSUMURA, N ;

FUKADA, T ;

SENGA, K ;

FUKUSHIMA, Y ;

SARAIE, J .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :787-791

[6] STUDY ON THE BEHAVIOR OF SURFACE ADATOMS DURING PHOTOASSISTED MBE OF ZNSE AND IMPROVEMENT OF SURFACE-MORPHOLOGY [J].

MATSUMURA, N ;

SENGA, K ;

KAKUTA, J ;

FUKADA, T ;

SARAIE, J .

JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :279-283

[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSSE WITH HG-XE LAMP IRRADIATION [J].

MATSUMURA, N ;

TSUBOKURA, M ;

MIYAGAWA, K ;

NAKAMURA, N ;

MIYANAGI, Y ;

FUKADA, T ;

SARAIE, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (05) :L723-L726

[8] ULTRAVIOLET-IRRADIATION EFFECT ON THE MBE GROWTH OF ZNSE/GAAS OBSERVED BY RHEED [J].

OHISHI, M ;

SAITO, H ;

TORIHARA, H ;

FUJISAKI, Y ;

OHMORI, K .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :792-796

[9] INTENSITY VARIATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING ATOMIC LAYER EPITAXIAL-GROWTH AND SUBLIMATION OF ZN CHALCOGENIDES [J].

YAO, T ;

TAKEDA, T .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :43-48

[10] SURFACE PROCESSES IN ALE AND MBE GROWTH OF ZNSE - CORRELATION OF RHEED INTENSITY VARIATION WITH SURFACE COVERAGE [J].

ZHU, ZQ ;

HAGINO, M ;

UESUGI, K ;

KAMIYAMA, S ;

FUJIMOTO, M ;

YAO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (09) :1659-1663

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