ANALYSIS OF SILICON OXYNITRIDE LAYERS BY COMPLEMENTARY USE OF ELASTIC BACKSCATTERING AND NUCLEAR-REACTIONS

被引：5

作者：

BARCZ, A

TUROS, A

WIELUNSKI, L

SKRZYNECKA, I

机构：

[1] INST NUCL RES,NUCL REACTIONS DEPT,WARSAW,POLAND

[2] INST ELECTR TECHNOL,WARSAW,POLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 28卷 / 01期

关键词：

D O I：

10.1002/pssa.2210280134

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：293 / 301

页数：9

共 14 条

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