GROWTH OF EPITAXIAL NISI2 ON SI(111) AT ROOM-TEMPERATURE

被引：43

作者：

TUNG, RT

SCHREY, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 03期

关键词：

D O I：

10.1063/1.102385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：256 / 258

页数：3

共 37 条

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