TIME-RESOLVED REFLECTIVITY STUDIES OF THE GAAS(100)/OXIDE AND GAAS(100)/ZNSE INTERFACE

被引：2

作者：

CHEVILLE, RA

HAYNES, WB

HALAS, NJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.105292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A series of subpicosecond time-resolved reflectivity measurements on n-type GaAs (100) interfaces at photoexcitation densities of 10(18) cm-3 is reported. It is observed that the temporal dependence of the reflectivity signal within the first several picoseconds following photoexcitation is highly dependent upon interface preparation. The surface of the GaAs was prepared in several ways: by the growth of a thermal oxide overlayer, a photochemically passivated oxide overlayer, and an epitaxial ZnSe overlayer.

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页码：1476 / 1478

页数：3

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