INFLUENCE OF AL-POLY SI INTERACTIONS ON ELECTRICAL-PROPERTIES OF MOS CAPACITORS

被引：1

作者：

DUTOIT, M ^{[1
]}

WEISS, P ^{[1
]}

SANCHEZ, J ^{[1
]}

PFISTER, M ^{[1
]}

MORET, JM ^{[1
]}

机构：

[1] CTR ELECTR HORLOGER SA,CH-2000 NEUCHATEL,SWITZERLAND

来源：

PHYSICA B & C | 1985年 / 129卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(85)90580-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：255 / 259

页数：5

共 16 条

[1] A NEW ALUMINUM PATTERN-FORMATION USING SUBSTITUTION-REACTION OF ALUMINUM FOR POLYSILICON AND ITS APPLICATION TO MOS DEVICE FABRICATION
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[2] ARSENIC DOPANT INFLUENCE UPON THE SINTERING BEHAVIOR OF THE ALUMINUM-POLYSILICON INTERFACE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : 645 - 652
[3] GRAIN-BOUNDARY DIFFUSION OF ALUMINUM IN POLYCRYSTALLINE SILICON FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1576 - 1581
[4] STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) : 927 - 932
[5] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763
[6] MORET J, UNPUB
[7] AL-SI AND AL-POLY-SI CONTACT RESISTANCE IN INTEGRATED-CIRCUITS
NAGUIB, HM
HOBBS, LH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) : 573 - 577
[8] INTERACTION OF AL LAYERS WITH POLYCRYSTALLINE SI
NAKAMURA, K
NICOLET, MA
MAYER, JW
BLATTNER, RJ
EVANS, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) : 4678 - 4684
[9] LOW-TEMPERATURE DIFFUSION OF AL INTO POLYCRYSTALLINE SI
NAKAMURA, K
KAMOSHIDA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5349 - 5351
[10] Nicollian E. H., 1982, METAL OXIDE SEMICOND

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