MICROPLASMAS IN GAAS DIODES

被引：7

作者：

KEIL, G

RUGE, I

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.1714549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2600 / &

相关论文

共 6 条

[1] AVALANCHE NOISE STUDY IN MICROPLASMAS AND UNIFORM JUNCTIONS [J].

HAITZ, RH ;

GOETZBERGER, A .

SOLID-STATE ELECTRONICS, 1963, 6 (06) :678-&

[2] BREAKDOWN VOLTAGE OF GRADE GALLIUM ARSENIDE P-N JUNCTIONS [J].

KRESSEL, H ;

BLICHER, A .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2495-&

[3] THEORY OF MICROPLASMA INSTABILITY IN SILICON [J].

MCINTYRE, RJ .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :983-&

[4] MICROPLASMAS IN SILICON P-N JUNCTIONS AS DETECTORS FOR GAMMA RADIATION [J].

RUGE, I ;

KEIL, G .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (04) :390-&

[5] MUTUAL INTERACTION BETWEEN MICROPLASMAS IN SILICON P-N JUNCTIONS [J].

RUGE, I ;

KEIL, G .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) :3306-&

[6]

RUGE I, TO BE PUBLISHED