OPTICALLY DETECTED MAGNETIC-RESONANCE OF A LOCALIZED SPIN-TRIPLET MIDGAP CENTER IN GAAS

被引：10

作者：

GISLASON, HP ^{[1
]}

RONG, F ^{[1
]}

WATKINS, GD ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.32.6945

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6945 / 6948

页数：4

共 17 条

[11]

LEE KM, 1982, REV SCI INSTRUM, V53, P702, DOI 10.1063/1.1137010

[12] A LUMINESCENCE BAND ASSOCIATED WITH THE MAIN ELECTRON TRAP IN BULK GALLIUM-ARSENIDE [J].

MIRCEAROUSSEL, A ;

MAKRAMEBEID, S .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1007-1009

[13] LOCALIZATION OF EXCITONS TO CU-RELATED DEFECTS IN GAAS [J].

MONEMAR, B ;

GISLASON, HP ;

WANG, ZG .

PHYSICAL REVIEW B, 1985, 31 (12) :7919-7924

[14] INTERMIXING OF AN ALAS-GAAS SUPER-LATTICE BY ZN DIFFUSION [J].

VANVECHTEN, JA .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7082-7084

[15] ACCEPTOR ASSOCIATES AND BOUND EXCITONS IN GAAS-CU [J].

WANG, ZG ;

GISLASON, HP ;

MONEMAR, B .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :230-239

[16] OPTICALLY DETECTED MAGNETIC-RESONANCE OF THE ASGA ANTISITE VIA LUMINESCENCE IN GAAS [J].

WEBER, J ;

WATKINS, GD .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (10) :L269-L273

[17] ANNEALING BEHAVIOR OF THE 0,8EV LUMINESCENCE IN UNDOPED SEMI-INSULATING GAAS [J].

WINDSCHEIF, J ;

ENNEN, H ;

KAUFMANN, U ;

SCHNEIDER, J ;

KIMURA, T .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (01) :47-49

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