PHOTO-FIELD EFFECT IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引：31

作者：

VANBERKEL, C

POWELL, MJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 04期

关键词：

D O I：

10.1063/1.337282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1521 / 1527

页数：7

共 13 条

[1]

Djamdji F., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P569

[2] THE PLASMA-ENHANCED DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON [J].

EASTON, BC ;

CHAPMAN, JA ;

HILL, OF ;

POWELL, MJ .

VACUUM, 1984, 34 (3-4) :371-376

[3] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS [J].

GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) :455-&

[4] PHOTOCONDUCTIVITY AND RECOMBINATION IN AMORPHOUS-SILICON ALLOYS [J].

HACK, M ;

GUHA, S ;

SHUR, M .

PHYSICAL REVIEW B, 1984, 30 (12) :6991-6999

[5]

HARM AO, 1985, PHILOS MAG B, V52

[6] EVIDENCE FOR METASTABLE DEFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

HEPBURN, AR ;

MARSHALL, JM ;

MAIN, C ;

POWELL, MJ ;

VANBERKEL, C .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :1409-1412

[7] ANOMALOUS SURFACE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON [J].

JACKSON, WB ;

STREET, RA ;

THOMPSON, MJ .

SOLID STATE COMMUNICATIONS, 1983, 47 (06) :435-438

[8] THE EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN A-SI-H [J].

JACKSON, WB ;

THOMPSON, MJ .

PHYSICA B & C, 1983, 117 (MAR) :883-885

[9] FERMI-LEVEL EFFECTS IN A-SI-H PHOTOCONDUCTIVITY [J].

KAGAWA, T ;

MATSUMOTO, N ;

KUMABE, K .

PHYSICAL REVIEW B, 1983, 28 (08) :4570-4578

[10] CHARACTERISTICS OF AMORPHOUS-SILICON STAGGERED-ELECTRODE THIN-FILM TRANSISTORS [J].

POWELL, MJ ;

ORTON, JW .

APPLIED PHYSICS LETTERS, 1984, 45 (02) :171-173

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