TYPES OF OVAL DEFECTS ON GAAS GROWN BY MBE

被引：8

作者：

LEE, CT

CHOU, YC

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 91卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(88)90383-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：169 / 172

页数：4

共 11 条

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[3]

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[6] ORIGIN OF SURFACE-DEFECTS ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS [J].

ITO, T ;

SHINOHARA, M ;

IMAMURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L524-L526

[7] STRUCTURE-ANALYSIS OF OVAL DEFECT ON MOLECULAR-BEAM EPITAXIAL GAAS LAYER BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION [J].

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[8] AN INVESTIGATION OF GAAS FILMS GROWN BY MBE AT LOW SUBSTRATE TEMPERATURES AND GROWTH-RATES [J].

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[9] HILLOCK DEFECTS IN INGAAS/INP MULTI-LAYERS GROWN BY MBE [J].

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[10] SURFACE-DEFECTS ON MBE-GROWN GAAS [J].

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