COMPRESSION TESTS OF HEAT-TREATED CZOCHRALSKI-GROWN SILICON-CRYSTALS

被引：12

作者：

YASUTAKE, K

UMENO, M

KAWABE, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 69卷 / 01期

关键词：

D O I：

10.1002/pssa.2210690133

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：333 / 341

页数：9

共 16 条

[1]

Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[2]

Eshelby JW, 1961, PROGR SOLID MECH, V2, P87

[3] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J].

HU, SM .

APPLIED PHYSICS LETTERS, 1977, 31 (02) :53-55

[4]

JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[5] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].

KAISER, W ;

KECK, PH .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887

[6] A NEW INTRINSIC GETTERING TECHNIQUE USING MICRODEFECTS IN CZOCHRALSKI SILICON CRYSTAL - A NEW DOUBLE PREANNEALING TECHNIQUE [J].

NAGASAWA, K ;

MATSUSHITA, Y ;

KISHINO, S .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :622-624

[7] VIBRATIONAL ABSORPTION OF CARBON IN SILICON [J].

NEWMAN, RC ;

WILLIS, JB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) :373-&

[8] OXYGEN PRECIPITATION EFFECTS ON DEFORMATION OF DISLOCATION-FREE SILICON [J].

PATEL, JR ;

CHAUDHURI, AR .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) :2223-&

[9]

PATEL JR, 1964, DISCUSS FARADAY SOC, V38, P201

[10] ORIGIN OF THE DIFFERENCE IN THE MECHANICAL STRENGTHS OF CZOCHRALSKI-GROWN SILICON AND FLOAT-ZONE-GROWN SILICON [J].

SUMINO, K ;

HARADA, H ;

YONENAGA, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L49-L52

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