PLASMA-BASED DRY ETCHING TECHNIQUES IN THE SILICON INTEGRATED-CIRCUIT TECHNOLOGY

被引:37
作者
OEHRLEIN, GS [1 ]
REMBETSKI, JF [1 ]
机构
[1] IBM CORP,TECHNOL PROD,BURLINGTON FACIL,ESSEX JCT,VT 05452
关键词
D O I
10.1147/rd.362.0140
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Plasma-based dry etching techniques play a major role in the formation of silicon-based integrated circuits. The first part of this paper reviews our understanding of the means for achieving etching directionality and selectivity in reactive etching using glow discharges. Relevant trends in magnetically enhanced rf diode systems, microwave-excited electron cyclotron resonance plasmas, process clustering, real-time process monitoring and control, and computer modeling of glow discharges are discussed in the second part of the paper.
引用
收藏
页码:140 / 157
页数:18
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