共 98 条
[61]
SURFACE-ANALYSIS OF REALISTIC SEMICONDUCTOR MICROSTRUCTURES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1989, 7 (03)
:1030-1034
[62]
OEHRLEIN GS, 1989, J ELECTROCHEM SOC, V136, P2051
[63]
OEHRLEIN GS, 1987, MATER RES SOC S P, V98, P229
[65]
OHanlon J.F., 2015, USERS GUIDE VACUUM T, P385
[66]
INSITU INFRARED DIAGNOSTICS OF PARTICLE FORMING ETCH PLASMAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (03)
:1716-1721
[67]
A COMPARISON OF DIFFERENT METHODS FOR REMOVAL OF DAMAGE CAUSED BY REACTIVE SPUTTER ETCHING OF SILICON
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (02)
:586-589
[68]
MOS C-TERT EVALUATION OF REACTIVE ION ETCHED SILICON SUBSTRATE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1984, 23 (11)
:1526-1531
[69]
THE INFLUENCE OF ION-SCATTERING ON DRY ETCH PROFILES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1989, 7 (06)
:1483-1487
[70]
Rangelow I. W., 1986, Microelectronic Engineering, V5, P387, DOI 10.1016/0167-9317(86)90067-5