ADVANTAGES OF METAL-INSULATOR SEMICONDUCTOR STRUCTURES FOR SILICON SOLAR-CELLS

[1] P+/N HIGH-EFFICIENCY SILICON SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 285 - 287

[2] AU AND AL INTERFACE REACTIONS WITH SIO2 [J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1006 - 1008

[3] 678-MV OPEN-CIRCUIT VOLTAGE SILICON SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (06) : 483 - 485

[4] MEASUREMENT OF THE INTERLAYER BETWEEN ALUMINUM AND SILICON DIOXIDE USING ELLIPSOMETRIC, CAPACITANCE-VOLTAGE AND AUGER-ELECTRON SPECTROSCOPY TECHNIQUES [J]. THIN SOLID FILMS, 1981, 82 (02) : 183 - 193

[5] CHARLSON EJ, 1972, 1972 TECH DIG INT EL

[6] Cheek G., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P660

[7] CHEEK G, 1982, SOL CELLS, V7, P17

[8] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[9] Fossum J. G., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1294

[10] AN ANALYTIC MODEL FOR MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED REGIONS OF SILICON DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1018 - 1025

[1] P+/N HIGH-EFFICIENCY SILICON SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 285 - 287

[2] AU AND AL INTERFACE REACTIONS WITH SIO2 [J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1006 - 1008

[3] 678-MV OPEN-CIRCUIT VOLTAGE SILICON SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (06) : 483 - 485

[4] MEASUREMENT OF THE INTERLAYER BETWEEN ALUMINUM AND SILICON DIOXIDE USING ELLIPSOMETRIC, CAPACITANCE-VOLTAGE AND AUGER-ELECTRON SPECTROSCOPY TECHNIQUES [J]. THIN SOLID FILMS, 1981, 82 (02) : 183 - 193

[5] CHARLSON EJ, 1972, 1972 TECH DIG INT EL

[6] Cheek G., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P660

[7] CHEEK G, 1982, SOL CELLS, V7, P17

[8] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[9] Fossum J. G., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1294

[10] AN ANALYTIC MODEL FOR MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED REGIONS OF SILICON DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1018 - 1025