SCANNED SURFACE PHOTOVOLTAGE DETECTION OF DEFECTS IN SILICON WAFERS

被引：9

作者：

PHILBRICK, JW

DISTEFANO, TH

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533

[2] IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年

关键词：

D O I：

10.1109/IRPS.1975.362690

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：159 / 167

页数：9

共 19 条

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PHYSICA, 1954, 20 (11) :1037-1041

[2] THE USE OF A MODULATED LIGHT SPOT IN SEMICONDUCTOR MEASUREMENTS [J].

AVERY, DG ;

GUNN, JB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (11) :918-921

[3]

BROSENS PJ, 1971, ELECTROOPT SYST DESI, P21

[4] INTERFACE IMAGING BY SCANNING INTERNAL PHOTOEMISSION [J].

DISTEFANO, TH ;

VIGGIANO, JM .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1974, 18 (02) :94-99

[5]

DISTEFANO TH, TO BE PUBLISHED

[6] DEFECT GENERATION IN SILICON [J].

DUMIN, DJ ;

HENRY, WN .

METALLURGICAL TRANSACTIONS, 1971, 2 (03) :677-&

[7]

HABERER JR, 1967, PHYS FAIL ELECTRON, V5, P51

[8] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573

[9]

HU SW, TO BE PUBLISHED

[10]

KASPRZAK LA, 1975, REV SCI I, V46, P17

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