ROLE OF ELECTRONIC PROCESSES IN EPITAXIAL RECRYSTALLIZATION OF AMORPHOUS-SEMICONDUCTORS

[1] BRODSKY MH, 1975, CRIT REV SOLID STATE, V5, P592

[2] CAMPISANO SU, UNPUB

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[4] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[5] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700

[6] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4106 - 4110

[7] Frank W., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P31

[8] RECENT RESULTS ON THE STRUCTURE OF DISLOCATIONS IN TETRAHEDRALLY COORDINATED SEMICONDUCTORS [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 27 - 32

[9] THE STRUCTURE OF KINKS ON THE 90-DEGREES PARTIAL IN SILICON AND A STRAINED-BOND MODEL FOR DISLOCATION-MOTION [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (02): : 213 - 219

[10] EPITAXIAL REGROWTH OF INTRINSIC, P-31-DOPED AND COMPENSATED (P-31+B-11 DOPED) AMORPHOUS SI [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4399 - 4405

[1] BRODSKY MH, 1975, CRIT REV SOLID STATE, V5, P592

[2] CAMPISANO SU, UNPUB

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[4] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[5] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700

[6] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4106 - 4110

[7] Frank W., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P31

[8] RECENT RESULTS ON THE STRUCTURE OF DISLOCATIONS IN TETRAHEDRALLY COORDINATED SEMICONDUCTORS [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 27 - 32

[9] THE STRUCTURE OF KINKS ON THE 90-DEGREES PARTIAL IN SILICON AND A STRAINED-BOND MODEL FOR DISLOCATION-MOTION [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (02): : 213 - 219

[10] EPITAXIAL REGROWTH OF INTRINSIC, P-31-DOPED AND COMPENSATED (P-31+B-11 DOPED) AMORPHOUS SI [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4399 - 4405