PHOTOASSISTED DOPING OF NITROGEN INTO ZNSE USING ETHYL AZIDE

被引:16
作者
HAYASHI, K
机构
[1] Department of Electrical Engineering, Keio University, Kohoku-ku, Yokohama 223, 14-1
关键词
D O I
10.1063/1.112800
中图分类号
O59 [应用物理学];
学科分类号
摘要
Use of ethyl azide as a dopant for nitrogen doping into ZnSe was proposed. Also attempted was photoexciting ethyl azide during metalorganic vapor phase epitaxial growth of nitrogen-doped ZnSe. Low temperature photoluminescence spectra of moderately doped samples were dominated by donor-acceptor pair emissions. Moreover, a substantial photoenhancement of an acceptor incorporation was indicated by the photoluminescence measurements. Supportive evidence of the photoenhancement of chemical reactivity of the ethyl azide molecules was obtained by an in situ optical reflection measurement. A possible mechanism of nitrogen incorporation into ZnSe is discussed. (C) 1994 American Institute of Physics.
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页码:2084 / 2086
页数:3
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共 11 条
  • [1] ABRAMOVITCH RA, 1971, CHEM AZIDO GROUP, pCH5
  • [2] ONE-COLOR PHOTOLYSIS IONIZATION STUDY OF HN3 - THE N-2 FRAGMENT INTERNAL ENERGY-DISTRIBUTION AND MU-V-J CORRELATIONS
    CHU, JJ
    MARCUS, P
    DAGDIGIAN, PJ
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1990, 93 (01) : 257 - 267
  • [3] PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY OF NITROGEN-DOPED ZNSE USING TERTIARYBUTYLAMINE AS DOPING SOURCE
    FUJITA, S
    ASANO, T
    MAEHARA, K
    FUJITA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (8B): : L1153 - L1156
  • [4] COMPENSATION PROCESSES IN NITROGEN DOPED ZNSE
    HAUKSSON, IS
    SIMPSON, J
    WANG, SY
    PRIOR, KA
    CAVENETT, BC
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (18) : 2208 - 2210
  • [5] HAYASHI K, IN PRESS ADV MATER O
  • [6] PLANAR-DOPING OF MOLECULAR-BEAM EPITAXY GROWN ZNSE WITH PLASMA-EXCITED NITROGEN
    MATSUMOTO, S
    TOSAKA, H
    YOSHIDA, T
    KOBAYASHI, M
    YOSHIKAWA, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (2B): : L229 - L232
  • [7] NITROGEN RADICAL DOPING DURING METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE
    MORIMOTO, K
    FUJINO, T
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (17) : 2384 - 2386
  • [8] CHARACTERISTICS OF P-TYPE ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY WITH RADICAL DOPING
    OHKAWA, K
    KARASAWA, T
    MITSUYU, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2A): : L152 - L155
  • [9] P-TYPE ZNSE BY NITROGEN ATOM BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
    PARK, RM
    TROFFER, MB
    ROULEAU, CM
    DEPUYDT, JM
    HAASE, MA
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (20) : 2127 - 2129
  • [10] HEAVILY DOPED P-ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY
    QIU, J
    DEPUYDT, JM
    CHENG, H
    HAASE, MA
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (23) : 2992 - 2994