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THE NUCLEATION AND GROWTH OF GERMANIUM ON (11BAR02) SAPPHIRE DEPOSITED BY MOLECULAR-BEAM EPITAXY

被引：8
作者：
GODBEY, DJ
TWIGG, ME
机构：
[1] Naval Research Laboratory, Electronics Science and Technology Division Code 6812, Washington
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 08期
关键词：
D O I：
10.1063/1.348392
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Single-crystal germanium on (110BAR2) sapphire films are grown after a substrate preanneal of 1400-degrees-C at growth temperatures above 700-degrees-C. At a growth temperature of 800-degrees-C, the nucleation site density was approximately 10(11) cm-2. For thin germanium films, the isolated islands were singly oriented, with single-crystal films obtained for thicker grown films. A 400-degrees-C growth temperature on sapphire was insufficiently high to get epitaxial growth and produced polycrystallites. Growth at 400-degrees-C on an 800-degrees-C grown germanium template did result in epitaxy. However, a high fraction of the twinned orientation was produced, resulting in a bicrystalline film.
引用
收藏
页码：4216 / 4221
页数：6
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