ZINC-DELTA DOPING OF GAAS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：13

作者：

HOBSON, WS ^{[1
]}

PEARTON, SJ ^{[1
]}

SCHUBERT, EF ^{[1
]}

CABANISS, G ^{[1
]}

机构：

[1] SOLECON LABS,SAN JOSE,CA 95131

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 15期

关键词：

D O I：

10.1063/1.102240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1546 / 1548

页数：3

共 14 条

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[2]

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[3] DIFFUSION STUDIES OF THE SI-DELTA-DOPED GAAS BY CAPACITANCE-VOLTAGE MEASUREMENT [J].

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[4] GROWTH AND DIFFUSION OF ABRUPT ZINC PROFILES IN GALLIUM-ARSENIDE AND HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

ENQUIST, P ;

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DELYON, TJ .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4485-4493

[5] ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY [J].

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[6]

KOCH F, 1989, MATER SCI ENG B, V1, P221

[7] THE CONTROL AND MODELING OF DOPING PROFILES AND TRANSIENTS IN MOVPE GROWTH [J].

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CARDONE, F .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :624-630

[8] FUNDAMENTAL-STUDIES AND DEVICE APPLICATION OF DELTA-DOPING IN GAAS-LAYERS AND IN ALXGA1-XAS/GAAS HETEROSTRUCTURES [J].

PLOOG, K ;

HAUSER, M ;

FISCHER, A .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (03) :233-244

[9] SPATIAL LOCALIZATION AND DIFFUSION OF ATOMIC SILICON IN DELTA-DOPED GAAS [J].

SCHUBERT, EF ;

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STARK, JB .

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[10]

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