OXYGEN INCORPORATION IN MOLECULAR-BEAM EPITAXIAL SILICON DOPED USING A BORIC OXIDE SOURCE

被引：15

作者：

TUPPEN, CG ^{[1
]}

PRIOR, KA ^{[1
]}

GIBBINGS, CJ ^{[1
]}

HOUGHTON, DC ^{[1
]}

JACKMAN, TE ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2751 / 2754

页数：4

共 10 条

[1]

AIZAKI H, 1985, UNPUB 17TH P C SOL S, P301

[2] BORON-OXIDE INTERACTION WITH SILICON IN SILICON MOLECULAR-BEAM EPITAXY [J].

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[3] SOLUBILITY AND DIFFUSION-COEFFICIENT OF OXYGEN IN SILICON [J].

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[4] MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS [J].

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APPLIED PHYSICS LETTERS, 1985, 46 (11) :1064-1066

[5] SURFACE RESTORATION OF OXYGEN-IMPLANTED SILICON [J].

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JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1991-1999

[6]

Kubaschewski O., 1979, METALLURGICAL THERMO

[7] BORON DOPING IN SI MOLECULAR-BEAM EPITAXY BY COEVAPORATION OF B2O3 OR DOPED SILICON [J].

OSTROM, RM ;

ALLEN, FG .

APPLIED PHYSICS LETTERS, 1986, 48 (03) :221-226

[8] BORON HEAVY DOPING FOR SI MOLECULAR-BEAM EPITAXY USING A HBO2 SOURCE [J].

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[9]

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[10]

Wang K., COMMUNICATION

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