HOMOEPITAXIAL GROWTH OF COSI2 AND NISI2 ON (100) AND (110) SURFACES AT ROOM-TEMPERATURE

被引：39

作者：

TUNG, RT

SCHREY, F

YALISOVE, SM

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 19期

关键词：

D O I：

10.1063/1.102338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2005 / 2007

页数：3

共 21 条

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