EFFECT OF SURFACE-TREATMENT ON DOPANT DIFFUSION IN POLYCRYSTALLINE SILICON CAPPED SHALLOW JUNCTION BIPOLAR-TRANSISTORS

被引：6

作者：

MCLAUGHLIN, KL ^{[1
]}

TAYLOR, MA ^{[1
]}

SWEENEY, G ^{[1
]}

机构：

[1] MOTOROLA INC,BIPOLAR TECHNOL CTR,MESA,AZ 85201

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.95954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：992 / 994

页数：3

共 17 条

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