PHOTOCHEMICAL VAPOR-DEPOSITION OF SILICON OXYNITRIDE FILMS BY DEUTERIUM LAMP

被引:6
作者
WATANABE, J
HANABUSA, M
机构
关键词
D O I
10.1557/JMR.1989.0882
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:882 / 885
页数:4
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共 16 条
[1]   WAVELENGTH CONTROL OF IRON-NICKEL COMPOSITION IN LASER-INDUCED CHEMICAL VAPOR-DEPOSITED FILMS [J].
ARMSTRONG, JV ;
BURK, AA ;
COEY, JMD ;
MOORJANI, K .
APPLIED PHYSICS LETTERS, 1987, 50 (18) :1231-1233
[2]   FLUORINE-ENHANCED PLASMA GROWTH OF NATIVE LAYERS ON SILICON [J].
CHANG, RPH ;
CHANG, CC ;
DARACK, S .
APPLIED PHYSICS LETTERS, 1980, 36 (12) :999-1002
[3]   PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J].
DENISSE, CMM ;
TROOST, KZ ;
ELFERINK, JBO ;
HABRAKEN, FHPM ;
VANDEWEG, WF ;
HENDRIKS, M .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2536-2542
[4]   HYDROGEN IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON (OXY)NITRIDE FILMS [J].
HABRAKEN, FHPM ;
TIJHAAR, RHG ;
VANDERWEG, WF ;
KUIPER, AET ;
WILLEMSEN, MFC .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :447-453
[5]   THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].
HABRAKEN, FHPM ;
KUIPER, AET ;
TAMMINGA, Y .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6996-7002
[6]  
Hanabusa M., 1987, Material Science Reports, V2, P51, DOI 10.1016/S0920-2307(87)80002-6
[7]   PROPERTIES OF SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD [J].
HIRAO, T ;
SETSUNE, K ;
KITAGAWA, M ;
KAMADA, T ;
OHMURA, T ;
WASA, K ;
IZUMI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01) :L21-L23
[8]   VACUUM ULTRAVIOLET-ABSORPTION CROSS-SECTIONS OF SIH4, GEH4, SI2H6, AND SI3H8 [J].
ITOH, U ;
TOYOSHIMA, Y ;
ONUKI, H ;
WASHIDA, N ;
IBUKI, T .
JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (09) :4867-4872
[9]   DEPOSITION AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J].
KUIPER, AET ;
KOO, SW ;
HABRAKEN, FHPM ;
TAMMINGA, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :62-66
[10]   RAPID THERMAL NITRIDATION OF SIO2 FOR NITROXIDE THIN DIELECTRICS [J].
MOSLEHI, MM ;
SARASWAT, KC ;
SHATAS, SC .
APPLIED PHYSICS LETTERS, 1985, 47 (10) :1113-1115