HIGH-PURITY ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY USING A SUPERLATTICE BUFFER LAYER

被引：11

作者：

HAYAKAWA, T

SUYAMA, T

KONDO, M

TAKAHASHI, K

YAMAMOTO, S

YANO, S

HIJIKATA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.336277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4452 / 4454

页数：3

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共 11 条

[1] EFFECTS OF PRELAYERS ON MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
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[2] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 615 - 617
[3] IMPROVED ALXGA1-XAS BULK LASERS WITH SUPERLATTICE INTERFACES
FISCHER, R
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DRUMMOND, TJ
KOPP, W
MORKOC, H
ANDERSON, E
PION, M
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 1 - 3
[4] MBE GROWTH OF EXTREMELY HIGH-QUALITY GAAS-ALGAAS GRIN-SCH LASERS WITH A SUPERLATTICE BUFFER LAYER
FUJII, T
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ISHIKAWA, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 776 - 778
[5] GOSSARD AC, 1982, COLLECT PAPERS, P39
[6] SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY FOR HIGH ELECTRON-MOBILITY TRANSISTOR IC APPLICATIONS
HIYAMIZU, S
SAITO, J
KONDO, K
YAMAMOTO, T
ISHIKAWA, T
SASA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 585 - 587
[7] USE OF A GAAS SMOOTHING LAYER TO IMPROVE THE HETEROINTERFACE OF GAAS/ALXGA1-XAS FIELD-EFFECT TRANSISTORS
KOPP, W
SU, SL
FISCHER, R
LYONS, WG
THORNE, RE
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 563 - 565
[8] COMPOSITION DEPENDENCE OF PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
MIHARA, M
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MANNOH, M
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NARITSUKA, S
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YUASA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3760 - 3764
[9] EXTRINSIC PHOTO-LUMINESCENCE FROM GAAS QUANTUM WELLS
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[J]. PHYSICAL REVIEW B, 1982, 25 (06): : 3871 - 3877
[10] SUPERLATTICE BUFFERS FOR GAAS POWER MESFETS GROWN BY MBE
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VANREES, B
LILES, B
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 265 - 268